1N5235B

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Taiwan Semiconductor
1N5235B
Production

Zener Diode, 6.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35

Body Material Glass
Breakdown Voltage 51V
China RoHS Compliant
Clamping Voltage 70.1V
Contact Plating Tin
Export Control Classification Number (ECCN) Code EAR99
Forward Voltage 1V
Harmonized Tariff Schedule (HTS) Code 8541.10.00.50
Impedance
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Breakdown Voltage 53.6V
Max Forward Surge Current (Ifsm) 2.5A
Max Junction Temperature (Tj) 200°C
Max Operating Temperature 200°C
Max Power Dissipation 500mW
Max Repetitive Reverse Voltage (Vrrm) 250V
Max Reverse Leakage Current 1µA
Min Breakdown Voltage 48.5V
Min Operating Temperature -65°C
Number of Elements 1
Number of Terminals 2
Peak Pulse Current 21.4A
Peak Pulse Power 1.5kW
Peak Reverse Current 3µA
Polarity Unidirectional
Power Dissipation 500mW
REACH SVHC Yes
Reference Voltage 6.8V
Reverse Recovery Time 50ns
Reverse Standoff Voltage 43.6V
RoHS Compliant
Test Current 20mA
Voltage Tolerance 5%
Zener Current 20mA
Zener Voltage 6.8V

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