1N5262B

No image

Taiwan Semiconductor
1N5262B
Production

Zener Diode, 51V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35

Body Material Glass
Breakdown Voltage 51V
China RoHS Compliant
Clamping Voltage 70.1V
Contact Plating Tin
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Forward Voltage 1V
Harmonized Tariff Schedule (HTS) Code 8541.10.00.50
Impedance 125Ω
Introduction Date 2007-10-09
Lead Free Lead Free
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Breakdown Voltage 53.6V
Max Forward Surge Current (Ifsm) 2.5A
Max Junction Temperature (Tj) 200°C
Max Operating Temperature 200°C
Max Power Dissipation 500mW
Max Repetitive Reverse Voltage (Vrrm) 250V
Max Reverse Leakage Current 1µA
Min Breakdown Voltage 48.5V
Min Operating Temperature -65°C
Number of Elements 1
Number of Terminals 2
Peak Pulse Current 21.4A
Peak Pulse Power 1.5kW
Peak Reverse Current 100nA
Polarity Unidirectional
Power Dissipation 500mW
Power Rating 500mW
REACH SVHC Yes
Reference Voltage 51V
Reverse Recovery Time 50ns
Reverse Standoff Voltage 43.6V
RoHS Compliant
Test Current 2.5mA
Voltage Rating (DC) 51V
Voltage Tolerance 5%
Zener Current 2.5mA
Zener Voltage 51V

Other Distributors

Buy
Stock Break
DE: 0
Buy
Stock Break
GB: 0
Central Semiconductor
Production
Central Semiconductor
Unknown
Diodes Inc.
Obsolete
ITT / Cannon
Unknown
Central Semiconductor
Unknown
Rectron
Production
Diodes Inc.
Production
Microchip
Production
Diodes Inc.
Obsolete
Diodes Inc.
Production
Diodes Inc.
Obsolete
Vishay
Obsolete
Vishay
Production
Nexperia
Production
Nexperia
Production
Nexperia
Production
Nexperia
Production
Nexperia
Production
Nexperia
Production

See more alternatives See less alternatives