2N3583

No image

Central Semiconductor
2N3583
Obsolete

Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin

Body Material Metal
Case/Package TO-66
Collector Base Voltage (VCBO) 250V
Collector Emitter Breakdown Voltage 175V
Collector Emitter Saturation Voltage 5V
Collector Emitter Voltage (VCEO) 175V
Export Control Classification Number (ECCN) Code EAR99
Emitter Base Voltage (VEBO) 6V
Gain Bandwidth Product 10MHz
hFE Min 10
Introduction Date 1992-10-19
Lifecycle Status Obsolete
Max Collector Current 1A
Max Operating Temperature 200°C
Max Power Dissipation 35W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Terminals 2
Polarity NPN
RoHS Non-Compliant
Transition Frequency 10MHz
Motorola
Obsolete
Fairchild Semiconductor
Obsolete
Texas Instruments
Unknown
Texas Instruments
Unknown
Texas Instruments
Unknown
Harris
Obsolete
Central Semiconductor
Obsolete
Central Semiconductor
Obsolete
Central Semiconductor
Obsolete
Central Semiconductor
Obsolete
Fairchild Semiconductor
Obsolete
Motorola
Obsolete
Motorola
Obsolete
Motorola
Obsolete
Central Semiconductor
Obsolete
Central Semiconductor
Obsolete
Microchip
Production
Microchip
Production
Central Semiconductor
Obsolete
Panasonic
Unknown

See more alternatives See less alternatives