2N5116

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Central Semiconductor
2N5116
Production

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18

Body Material Metal
Case/Package TO-18
Drain to Source Resistance 150Ω
Element Configuration Single
Gate to Source Voltage (Vgs) 30V
Input Capacitance 25pF
Lifecycle Status Production
Max Operating Temperature 200°C
Max Power Dissipation 500mW
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 500mW
Radiation Hardening No
REACH SVHC No
RoHS Non-Compliant

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