2N5875

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Central Semiconductor
2N5875
Obsolete

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin

Body Material Metal
Collector Emitter Saturation Voltage 3V
Collector Emitter Voltage (VCEO) 60V
Export Control Classification Number (ECCN) Code EAR99
hFE Min 4
Introduction Date 1982-11-30
Lifecycle Status Obsolete
Max Collector Current 10A
Max Operating Temperature 200°C
Max Power Dissipation 150W
Min Operating Temperature -65°C
Number of Elements 1
Number of Terminals 2
Rise Time 700ns
RoHS Non-Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Transition Frequency 4MHz
STMicroelectronics
Obsolete
Motorola
Obsolete
onsemi
Obsolete
Multicomp
Production
Central Semiconductor
Obsolete
STMicroelectronics
Obsolete
STMicroelectronics
Obsolete
Bourns
Obsolete
onsemi
Obsolete
onsemi
Obsolete
onsemi
Obsolete
Bourns
Obsolete
Bourns
Obsolete
Bourns
Obsolete
Bourns
Obsolete
Bourns
Obsolete
Bourns
Obsolete
Bourns
Obsolete
Bourns
Obsolete
Bourns
Obsolete

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