2SB676

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Toshiba
2SB676
Obsolete

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Collector Emitter Voltage (VCEO) 80V
Export Control Classification Number (ECCN) Code EAR99
hFE Min 1000
Introduction Date 1983-03-01
Lifecycle Status Obsolete
Max Collector Current 4A
Number of Elements 1
Number of Terminals 3
RoHS Non-Compliant

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CN: 7,000
100 $2.9288
1000 $2.5382
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US: 5
1 $2.25
10 $2.07
100 $2.07
1000 $2.07
onsemi
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onsemi
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onsemi
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onsemi
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STMicroelectronics
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onsemi
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onsemi
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NTE Electronics
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Central Semiconductor
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STMicroelectronics
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Bourns
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Toshiba
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STMicroelectronics
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onsemi
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onsemi
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STMicroelectronics
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Bourns
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Bourns
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Bourns
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Bourns
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