2SD2391T100Q

2SD2391T100Q

ROHM
2SD2391T100Q
NRND

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Case/Package SOT-89
Collector Base Voltage (VCBO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 350mV
Collector Emitter Voltage (VCEO) 60V
Contact Plating Copper, Tin
Continuous Collector Current 2A
Current Rating 2A
Element Configuration Single
Emitter Base Voltage (VEBO) 6V
Gain Bandwidth Product 210MHz
Height 1.4mm
hFE Min 120
Lead Free Lead Free
Length 4.7mm
Lifecycle Status NRND
Max Breakdown Voltage 60V
Max Collector Current 2A
Max Frequency 100MHz
Max Operating Temperature 150°C
Max Power Dissipation 2W
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Cut Tape
Polarity NPN
Power Dissipation 500mW
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Termination SMD/SMT
Transition Frequency 210MHz
Voltage Rating (DC) 60V
Width 2.7mm

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1000 $0.216
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1 $0.36
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100 $0.237
1000 $0.178
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JP: 65
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10 $0.518
100 $0.276
1000 $0.216
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1000 $1.3162
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100 €0.98
1000 €0.3154
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$0.2924
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CN: 920
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HK: 99,842
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HK: 1,065
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HK: 1,000
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100 $0.1216
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