| Case/Package |
TO-226-3 |
| China RoHS |
Compliant |
| Collector Emitter Breakdown Voltage |
20V |
| Collector Emitter Saturation Voltage |
500mV |
| Collector Emitter Voltage (VCEO) |
20V |
| Contact Plating |
Tin |
| hFE Min |
85 |
| Lifecycle Status |
Obsolete |
| Max Collector Current |
1A |
| Max Operating Temperature |
150°C |
| Max Power Dissipation |
830mW |
| Mount |
Through Hole |
| Number of Elements |
1 |
| Number of Terminals |
3 |
| Packaging |
Bulk |
| RoHS |
Compliant |
| Transition Frequency |
170MHz |
onsemi
|
Obsolete
|
onsemi
|
Obsolete
|
NXP Semiconductors
|
Obsolete
|
NXP Semiconductors
|
Obsolete
|
NXP Semiconductors
|
Obsolete
|
onsemi
|
Obsolete
|
onsemi
|
Obsolete
|
NTE Electronics
|
Obsolete
|
NTE Electronics
|
Obsolete
|
NTE Electronics
|
Obsolete
|
Toshiba
|
Obsolete
|
Toshiba
|
Obsolete
|
onsemi
|
Obsolete
|
NTE Electronics
|
Obsolete
|
NTE Electronics
|
Obsolete
|
CDIL
|
Unknown
|
Diodes Inc.
|
Production
|
onsemi
|
Obsolete
|
Diodes Inc.
|
Obsolete
|
NTE Electronics
|
Obsolete
|
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