BC857B-7-F

BC857B-7-F

Diodes Inc.
BC857B-7-F
Production

Bipolar (BJT) Single Transistor, PNP, 45 V, 100 mA, 300 mW, SOT-23, Surface Mount

Case/Package SOT-23
China RoHS Compliant
Collector Base Voltage (VCBO) -50V
Collector Emitter Breakdown Voltage -45V
Collector Emitter Saturation Voltage -250mV
Collector Emitter Voltage (VCEO) 45V
Contact Plating Tin
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) -5V
Frequency 200MHz
Gain Bandwidth Product 200MHz
Height 1.1mm
hFE Min 220
Introduction Date 2002-10-09
Lead Free Lead Free
Length 3.05mm
Lifecycle Status Production
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Frequency 200MHz
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 300mW
Min Operating Temperature -65°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity PNP
Power Dissipation 310mW
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Transition Frequency 200MHz
Weight 7.994566mg
Width 1.4mm

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DE: 252,384
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100 $0.073
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US: 1,030
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100 $0.079
1000 $0.053
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100 S$0.133
1000 S$0.072
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SG: 54,000
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HK: 95,905
1 $0.0572
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100 $0.0368
1000 $0.0344
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HK: 88,843
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1000 $0.021
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DE: 2,335
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1000 $0.0315
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HK: 1,000
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100 $0.0152
1000 $0.0149
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CN: 69,357
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