BC857B

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Taiwan Semiconductor
BC857B
Production

SOT-23 -50V -0.1A PNP Bipolar Transistor

Breakdown Voltage 51V
Case/Package SOT-23
China RoHS Compliant
Clamping Voltage 70.1V
Collector Base Voltage (VCBO) -50V
Collector Emitter Saturation Voltage -650mV
Collector Emitter Voltage (VCEO) -45V
Continuous Collector Current -100mA
Drain to Source Voltage (Vdss) -60V
Element Configuration Single
Emitter Base Voltage (VEBO) -5V
Forward Voltage 1V
Gate to Source Voltage (Vgs) -1.5V
Height 1.2mm
hFE Min 220
Input Capacitance 436pF
Length 3mm
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Collector Current 100mA
Max Forward Surge Current (Ifsm) 2.5A
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 250mW
Max Repetitive Reverse Voltage (Vrrm) 250V
Max Reverse Leakage Current 1µA
Min Operating Temperature -55°C
Mount Surface Mount
Number of Channels 2
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Peak Pulse Current 21.4A
Peak Pulse Power 1.5kW
Polarity PNP
Power Dissipation 200mW
REACH SVHC Yes
Reverse Recovery Time 50ns
Reverse Standoff Voltage 24V
RoHS Compliant
Test Current 2.5mA
Transition Frequency 100MHz
Width 1.4mm
Zener Voltage 75V

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