BU508DF

BU508DF

NXP Semiconductors
BU508DF
Obsolete

Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Collector Emitter Saturation Voltage 1V
Collector Emitter Voltage (VCEO) 700V
Contact Plating Tin
Export Control Classification Number (ECCN) Code EAR99
hFE Min 6
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Introduction Date 1987-07-15
Lifecycle Status Obsolete
Max Collector Current 8A
Max Operating Temperature 150°C
Max Power Dissipation 125W
Number of Elements 1
Number of Terminals 3
Power Dissipation 34W
RoHS Compliant
Transition Frequency 7MHz
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