BUZ355

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Motorola
BUZ355
Obsolete

Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

Continuous Drain Current (ID) 6A
Drain to Source Resistance 1.5Ω
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 125W
Min Breakdown Voltage 800V
Number of Elements 1
Number of Terminals 3
Power Dissipation 125W
RoHS Non-Compliant

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US: 346
1 $14.31
10 $7.155
100 $5.724
1000 $5.724
STMicroelectronics
Obsolete
Fuji
Unknown
NXP Semiconductors
Obsolete