2N5884

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Central Semiconductor
2N5884
Obsolete

Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin

Body Material Metal
Case/Package TO-3
Collector Base Voltage (VCBO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 4V
Collector Emitter Voltage (VCEO) 80V
Export Control Classification Number (ECCN) Code EAR99
Emitter Base Voltage (VEBO) 5V
Fall Time 800ns
Gain Bandwidth Product 4MHz
hFE Min 4
Introduction Date 1994-01-01
Lifecycle Status Obsolete
Max Collector Current 25A
Max Operating Temperature 200°C
Max Power Dissipation 200W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Terminals 2
Polarity PNP
RoHS Non-Compliant
Transition Frequency 4MHz
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