| Case/Package |
TO-236-3 |
| Collector Emitter Breakdown Voltage |
50V |
| Collector-emitter Voltage-Max |
300mV |
| hFE Min |
80 |
| Max Collector Current |
100mA |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
200mW |
| Mount |
Surface Mount |
| Package Quantity |
3000 |
| Packaging |
Tape and Reel |
| Polarity |
NPN |
| Radiation Hardening |
No |
| RoHS Compliant |
Yes |
| Transition Frequency |
250MHz |
NXP Semiconductors
|
Volume Production
|
Diodes
|
Volume Production
|
ON Semiconductor
|
Volume Production
|
ON Semiconductor / Fairchild
|
Obsolete
|
ON Semiconductor
|
Volume Production
|
ON Semiconductor / Fairchild
|
Obsolete
|
Diodes
|
Volume Production
|
Toshiba
|
End of Life
|
ON Semiconductor
|
Volume Production
|
Infineon
|
End of Life
|
Infineon
|
Volume Production
|
Infineon
|
Volume Production
|
Diodes
|
Volume Production
|
Diodes
|
Volume Production
|
Diodes
|
Volume Production
|
Toshiba
|
Volume Production
|
Diodes
|
Volume Production
|
Infineon
|
End of Life
|
Rohm
|
Volume Production
|
NXP Semiconductors
|
Obsolete
|
Rohm
|
Not Recommended for New Design
|
ON Semiconductor
|
Volume Production
|
Diodes
|
Obsolete
|
ON Semiconductor
|
Volume Production
|
Infineon
|
End of Life
|
ON Semiconductor / Fairchild
|
Obsolete
|
Infineon
|
Obsolete
|
Infineon
|
End of Life
|
ON Semiconductor
|
End of Life
|
ON Semiconductor
|
Volume Production
|
ON Semiconductor
|
Volume Production
|
ON Semiconductor
|
Volume Production
|
NXP Semiconductors
|
Volume Production
|
NXP Semiconductors
|
Volume Production
|
NXP Semiconductors
|
Volume Production
|
Diodes
|
Volume Production
|
NXP Semiconductors
|
Obsolete
|
Diodes Zetex
|
Volume Production
|
Infineon
|
Volume Production
|
Rohm
|
Not Recommended for New Design
|
See more alternatives
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