|
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 14mΩ |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 6.6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 850µm |
| Input Capacitance | 4.31nF |
| Lead Free | Lead Free |
| Length | 3.35mm |
| Lifecycle Status | NRND |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2.1W |
| Min Breakdown Voltage | 30V |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Radiation Hardening | No |
| Rds On Max | 13mΩ |
| REACH SVHC | Yes |
| Rise Time | 24.4ns |
| RoHS | Compliant |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 33.1ns |
| Turn-On Delay Time | 5.5ns |
| Weight | 72.007789mg |
| Width | 3.35mm |
Diodes Inc.
|
NRND
|
Texas Instruments
|
Production
|
Alpha & Omega Semiconductor
|
Production
|
onsemi
|
Obsolete
|
onsemi
|
Obsolete
|