DP350T05-7

DP350T05-7

Diodes Inc.
DP350T05-7
Production

Bipolar (BJT) Single Transistor, PNP, 350 V, 500 mA, 300 mW, SOT-23, Surface Mount

Case/Package SOT-23
China RoHS Compliant
Collector Base Voltage (VCBO) 350V
Collector Emitter Breakdown Voltage 350V
Collector Emitter Saturation Voltage -1V
Collector Emitter Voltage (VCEO) 350V
Country of Origin Mainland China
Current Rating -500mA
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) -5V
Frequency 50MHz
Gain Bandwidth Product 50MHz
Height 1mm
hFE Min 15
Introduction Date 2005-10-18
Lead Free Lead Free
Length 3.05mm
Lifecycle Status Production
Max Breakdown Voltage 350V
Max Collector Current 500mA
Max Operating Temperature 150°C
Max Power Dissipation 300mW
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Cut Tape
Polarity PNP
Power Dissipation 300mW
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Termination SMD/SMT
Transition Frequency 50MHz
Voltage Rating (DC) -350V
Weight 7.994566mg
Width 1.4mm

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