ECH8651R-R-TL-H

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ECH8651R-R-TL-H
Obsolete

Power Field-Effect Transistor, 10A I(D), N-Channel, Metal-oxide Semiconductor FET

Case/Package SMD/SMT
Contact Plating Tin Bismuth
Continuous Drain Current (ID) 10A
Drain to Source Breakdown Voltage 24V
Drain to Source Resistance 14mΩ
Fall Time 2.5µs
Gate to Source Voltage (Vgs) 12V
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 1.5W
Min Operating Temperature -55°C
Mount Surface Mount
Number of Pins 8
Packaging Tape & Reel
Power Dissipation 1.4W
Radiation Hardening No
REACH SVHC No
Rise Time 1µs
RoHS Compliant
Turn-Off Delay Time 4µs
Turn-On Delay Time 300ns

Other Distributors

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US: 367
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CN: 55,000
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CN: 15,240