IRFS640B

IRFS640B

Fairchild Semiconductor
IRFS640B
Obsolete

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Continuous Drain Current (ID) 18A
Drain to Source Resistance 180mΩ
Drain to Source Voltage (Vdss) 200V
Export Control Classification Number (ECCN) Code EAR99
Introduction Date 2001-03-23
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 43W
Min Breakdown Voltage 200V
Number of Elements 1
Number of Terminals 3
REACH SVHC Yes
RoHS Non-Compliant
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