FDP6670S

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Fairchild Semiconductor
FDP6670S
Obsolete

Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...

Case/Package TO-220
Continuous Drain Current (ID) 62A
Drain to Source Breakdown Voltage 30V
Drain to Source Resistance 8.5mΩ
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 35ns
Gate to Source Voltage (Vgs) 20V
Introduction Date 2001-08-15
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 62.5W
Min Breakdown Voltage 30V
Min Operating Temperature -55°C
Number of Elements 1
Number of Terminals 3
REACH SVHC No
Rise Time 10ns
RoHS Non-Compliant
Turn-Off Delay Time 39ns

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CN: 7,500
10 $19.2839
100 $16.1735
1000 $16.1735
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US: 548
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