JAN2N2609

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Solitron Devices
JAN2N2609
Production

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18

Body Material Metal
Case/Package TO-18
Country of Origin USA
Export Control Classification Number (ECCN) Code EAR99
Gate to Source Voltage (Vgs) 30V
Introduction Date 1993-02-05
Lifecycle Status Production
Max Power Dissipation 300mW
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
RoHS Non-Compliant

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