UF28150J

UF28150J

MACOM
UF28150J
Production

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor...

Body Material Ceramic
Continuous Drain Current (ID) 16A
Current Rating 16A
Drain to Source Voltage (Vdss) 65V
Element Configuration Dual
Frequency 500MHz
Gain 8dB
Gate to Source Voltage (Vgs) 20V
Lifecycle Status Production
Max Operating Temperature 200°C
Max Power Dissipation 389W
Min Breakdown Voltage 65V
Min Operating Temperature -55°C
Mount Screw
Number of Elements 1
Number of Pins 5
Number of Terminals 4
Output Power 150W
Packaging Bulk
Power Dissipation 389W
REACH SVHC Yes
RoHS Compliant
Test Current 400mA
Test Voltage 28V
Voltage Rating 65V
DigiKey
Mouser
Microwave Components, LLC
Richardson RFPD

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MACOM
Production
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