MBR735

MBR735

Taiwan Semiconductor
MBR735
Production

Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 35V V(RRM), Silicon, TO-220AC

China RoHS Non-Compliant
Contact Plating Tin
Country of Origin Mainland China
Current Rating 7.5A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Forward Current 7.5A
Forward Voltage 950mV
Height 8.24mm
Harmonized Tariff Schedule (HTS) Code 8541.10.00.80
Introduction Date 1998-08-01
Lead Free Lead Free
Length 10.5mm
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Forward Surge Current (Ifsm) 150A
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Output Current 7.5A
Max Repetitive Reverse Voltage (Vrrm) 35V
Max Reverse Leakage Current 100µA
Max Surge Current 150A
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 2
Number of Terminals 2
Output Current 7.5A
Peak Reverse Current 100µA
Polarity Standard
Power Dissipation 400mW
REACH SVHC No
Reverse Recovery Time 25ns
Reverse Standoff Voltage 35V
RoHS Compliant
Voltage Rating (DC) 35V
Width 4.7mm

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