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| Case/Package | DPAK |
| China RoHS | Non-Compliant |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Contact Plating | Tin |
| Country of Origin | Mainland China |
| Current Rating | 3A |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 2.38mm |
| hFE Min | 10 |
| Introduction Date | 1998-09-25 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 15W |
| Min Operating Temperature | -65°C |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| REACH SVHC | No |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85 |
| Transition Frequency | 3MHz |
| Voltage Rating (DC) | 100V |
| Width | 6.22mm |
RS
RS
RS
Future Electronics
Future Electronics
Future Electronics
Farnell
Farnell
Farnell
Master Electronics
onsemi
|
Production
|
Diodes Inc.
|
NRND
|
onsemi
|
Obsolete
|
onsemi
|
Production
|
onsemi
|
Obsolete
|