MMBT5551-7

MMBT5551-7

Diodes Inc.
MMBT5551-7
Obsolete

Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon

Case/Package SOT-23
Collector Base Voltage (VCBO) 180V
Collector Emitter Breakdown Voltage 160V
Collector Emitter Voltage (VCEO) 160V
Continuous Collector Current 200mA
Current Rating 200mA
Element Configuration Single
Emitter Base Voltage (VEBO) 6V
Frequency 300MHz
Gain Bandwidth Product 300MHz
Height 1mm
hFE Min 30
Lead Free Contains Lead
Length 3.05mm
Lifecycle Status Obsolete
Max Breakdown Voltage 160V
Max Collector Current 200mA
Max Frequency 300MHz
Max Operating Temperature 150°C
Max Power Dissipation 300mW
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 300mW
Radiation Hardening No
REACH SVHC No
RoHS Non-Compliant
Transition Frequency 100MHz
Voltage Rating (DC) 160V
Weight 7.994566mg
Width 1.4mm

Other Distributors

Buy
Stock Break
US: 0
Buy
Stock Break
CN: 139,000
Buy
Stock Break
HK: 151,714
10 $0.0537
100 $0.052
1000 $0.0493
Buy
Stock Break
IT: 950
1 $11.35
10 $11.35
100 $11.35
1000 $11.35
Buy
Stock Break
HK: 137,592
1 $0.0285
10 $0.0228
100 $0.0228
1000 $0.0209
Buy
Stock Break
EU: 8,482
1 $2.68
10 $2.63
100 $2.58
1000 $2.53
Buy
Stock Break
US: 2
Buy
Stock Break
CN: 60,000
Buy
Stock Break
US: 0
onsemi
Production
onsemi
Production
Panjit
Production
onsemi
Obsolete
onsemi
Production
Diodes Inc.
Production
onsemi
Production
Diotec
Production
Central Semiconductor
Production
onsemi
Obsolete
onsemi
Obsolete
Central Semiconductor
Production
MCC
Production
Lite-On
Production
Central Semiconductor
Production
onsemi
Production
Panjit
Production
onsemi
Obsolete
Fairchild Semiconductor
Obsolete

See more alternatives See less alternatives