MT3S45T

MT3S45T

Toshiba
MT3S45T
Production

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

Collector Emitter Voltage (VCEO) 4.5V
Export Control Classification Number (ECCN) Code EAR99
hFE Min 70
Introduction Date 2002-12-04
Lifecycle Status Production
Max Collector Current 30mA
Max Operating Temperature 150°C
Max Power Dissipation 100mW
Number of Elements 1
Number of Terminals 3
RoHS Non-Compliant
Transition Frequency 18GHz

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