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| Case/Package | SOT-23-3 |
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2Ω |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 47.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.11mm |
| Input Capacitance | 21pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Junction Temperature (Tj) | 150°C |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 830mW |
| Min Breakdown Voltage | 30V |
| Min Operating Temperature | -55°C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Tape and Reel |
| Power Dissipation | 690mW |
| Radiation Hardening | No |
| Rds On Max | 1.5Ω |
| REACH SVHC | Yes |
| Resistance | 1Ω |
| Rise Time | 47.9ns |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 65.1ns |
| Turn-On Delay Time | 16.7ns |
| Width | 1.4mm |
RS
RS
RS
Future Electronics
Future Electronics
Future Electronics
Farnell
Farnell
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onsemi
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