PSMN00555P

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NXP Semiconductors
PSMN00555P
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Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Case/Package TO-220AB
Continuous Drain Current (ID) 75A
Current Rating 75A
Drain to Source Breakdown Voltage 55V
Drain to Source Resistance 6.7mΩ
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 253ns
Gate to Source Voltage (Vgs) 15V
Input Capacitance 6.5nF
Introduction Date 1999-04-16
Lead Free Lead Free
Max Operating Temperature 175°C
Max Power Dissipation 230W
Min Breakdown Voltage 55V
Min Operating Temperature -55°C
Number of Elements 1
Number of Terminals 3
Power Dissipation 230W
Rise Time 180ns
RoHS Compliant
Turn-Off Delay Time 420ns
Voltage Rating (DC) 55V

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CN: 13,383
1 $0.3032
10 $0.2971
100 $0.29
1000 $0.28
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US: 363
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