2N6052

2N6052

onsemi
2N6052
Obsolete

Tray Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 750 @ 6A 3V 12A 150W 100V

Body Material Metal
Case/Package TO-3
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Voltage (VCEO) 100V
Continuous Collector Current 12A
Current Rating -12A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Introduction Date 1991-06-01
Lead Free Contains Lead
Lifecycle Status Obsolete
Max Collector Current 12A
Max Operating Temperature 200°C
Max Power Dissipation 150W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Terminals 2
Polarity PNP
Power Dissipation 150W
REACH SVHC No
RoHS Non-Compliant
Transition Frequency 4MHz
Voltage Rating (DC) -100V

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CN: 29,000
100 $2.0743
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HK: 2,202
1 $1.509
10 $1.509
100 $1.509
1000 $1.509
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CN: 13,509
1 $1.513
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100 $1.44
1000 $1.39
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HK: 60
1 $2.20
10 $2.20
100 $2.20
1000 $2.20
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US: 57
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US: 3
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CN: 55,000
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