ISL9N307AS3ST

ISL9N307AS3ST

onsemi
ISL9N307AS3ST
Obsolete

Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

Continuous Drain Current (ID) 75A
Drain to Source Breakdown Voltage 30V
Drain to Source Resistance 7mΩ
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 35ns
Gate to Source Voltage (Vgs) 20V
Introduction Date 2001-05-11
Lifecycle Status Obsolete
Max Operating Temperature 175°C
Max Power Dissipation 100W
Min Breakdown Voltage 30V
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Power Dissipation 100W
REACH SVHC No
Rise Time 45ns
RoHS Compliant
Turn-Off Delay Time 60ns
Rochester Electronics

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100 $0.5152
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CN: 8,844
1 $0.1654
10 $0.1621
100 $0.16
1000 $0.15
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US: 7
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CN: 80,000
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