MJD3055T4

MJD3055T4

onsemi
MJD3055T4
Obsolete

Cut Tape (CT) Surface Mount NPN Single Bipolar (BJT) Transistor 20 @ 4A 4V 50muA 1.75W 2MHz

Case/Package TO-252-3
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 70V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1.1V
Collector Emitter Voltage (VCEO) 60V
Current Rating 10A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Gain Bandwidth Product 2MHz
hFE Min 5
Introduction Date 1991-06-01
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Breakdown Voltage 60V
Max Collector Current 10A
Max Operating Temperature 150°C
Max Power Dissipation 20W
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Packaging Tape and Reel
Polarity NPN
Power Dissipation 20W
REACH SVHC No
RoHS Compliant
Transition Frequency 2MHz
Voltage Rating (DC) 60V

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