MTB30P06VG

MTB30P06VG

onsemi
MTB30P06VG
Obsolete

Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

China RoHS Non-Compliant
Contact Plating Tin
Continuous Drain Current (ID) 30A
Drain to Source Resistance 80mΩ
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Introduction Date 1996-01-01
Lifecycle Status Obsolete
Max Operating Temperature 175°C
Max Power Dissipation 125W
Min Breakdown Voltage 60V
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 2
REACH SVHC No
RoHS Compliant

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