RF1S30P06SM9A

RF1S30P06SM9A

onsemi
RF1S30P06SM9A
Obsolete

30 A 60 V 0.065 Ohm P-channel Si Power Mosfet TO-263AB

Continuous Drain Current (ID) 30A
Drain to Source Breakdown Voltage -60V
Drain to Source Resistance 65mΩ
Drain to Source Voltage (Vdss) -60V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 18ns
Gate to Source Voltage (Vgs) 20V
Height 5.08mm
Introduction Date 1998-09-01
Lifecycle Status Obsolete
Max Junction Temperature (Tj) 175°C
Max Operating Temperature 175°C
Max Power Dissipation 135W
Min Breakdown Voltage 60V
Min Operating Temperature -55°C
Number of Channels 1
Number of Elements 1
Number of Terminals 2
Power Dissipation 135W
Rise Time 23ns
RoHS Non-Compliant
Turn-Off Delay Time 28ns
Turn-On Delay Time 15ns

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