OPB804

OPB804

Optek
OPB804
Production

Bulk Phototransistor 4 Through-Beam Through-Beam Optical Sensor 0.155 (3.94mm) 30mA 30V 85C

Collector Emitter Breakdown Voltage 30V
Collector Emitter Voltage (VCEO) 30V
Country of Origin Mexico
Dark Current 100nA
Forward Current 50mA
Forward Voltage 1.25V
Input Current 20mA
Introduction Date 1993-01-01
Lead Free Lead Free
Lifecycle Status Production
Max Collector Current 30mA
Max Operating Temperature 85°C
Max Power Dissipation 100mW
Min Operating Temperature -40°C
Mount PCB, Through Hole
Number of Circuits 1
Number of Elements 1
Number of Pins 4
Operating Supply Voltage 1.6V
Output Configuration Phototransistor
Output Voltage 30V
Packaging Bulk
Power Dissipation 100mW
Radiation Hardening No
REACH SVHC Yes
Reverse Breakdown Voltage 2V
RoHS Compliant
Schedule B 8541408000, 8541408000|8541408000|8541408000|8541408000|8541408000
Sensing Distance 3.937mm
Termination Solder
Touchscreen Infrared (IR)
Voltage Rating (DC) 30V
Wavelength 935nm

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