| Collector Emitter Breakdown Voltage |
30V |
| Collector Emitter Voltage (VCEO) |
30V |
| Dark Current |
100nA |
| Fall Time |
20µs |
| Forward Current |
50mA |
| Lifecycle Status |
Production |
| Max Breakdown Voltage |
30V |
| Max Operating Temperature |
85°C |
| Min Operating Temperature |
-40°C |
| Mount |
Through Hole |
| Number of Circuits |
1 |
| Number of Elements |
1 |
| Number of Pins |
4 |
| Output Configuration |
Phototransistor |
| Packaging |
Bulk |
| Power Dissipation |
100mW |
| Radiation Hardening |
No |
| REACH SVHC |
Yes |
| Response Time |
12µs |
| Reverse Breakdown Voltage |
2V |
| Rise Time |
20µs |
| RoHS |
Compliant |
| Schedule B |
8541408000, 8541408000|8541408000|8541408000|8541408000|8541408000 |
| Sensing Distance |
2.54mm |
| Touchscreen |
Infrared (IR) |
| Wavelength |
890nm |
Panasonic
|
Obsolete
|
Isocom
|
Production
|
onsemi
|
Obsolete
|
onsemi
|
Obsolete
|
onsemi
|
Obsolete
|
Panasonic
|
Obsolete
|
onsemi
|
Obsolete
|
Omron
|
Production
|
Omron
|
Production
|
Omron
|
Obsolete
|
Omron
|
EOL
|
Sharp
|
Obsolete
|
Honeywell
|
Obsolete
|
Isocom
|
Production
|
Isocom
|
Production
|
Fairchild Semiconductor
|
Obsolete
|
Sharp
|
Obsolete
|
Sharp
|
Obsolete
|
Isocom
|
Production
|
Honeywell
|
Obsolete
|
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