|
|
|
| Breakdown Voltage | 13.2V |
| Clamping Voltage | 18.2V |
| Contact Plating | Tin |
| Direction | Unidirectional |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Harmonized Tariff Schedule (HTS) Code | 8541.10.00.50 |
| Introduction Date | 2012-05-30 |
| Lifecycle Status | Production |
| Max Breakdown Voltage | 14V |
| Max Operating Temperature | 175°C |
| Max Reverse Leakage Current | 1µA |
| Min Breakdown Voltage | 12.4V |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Peak Pulse Current | 33A |
| Peak Pulse Power | 600W |
| Polarity | Unidirectional |
| Radiation Hardening | No |
| REACH SVHC | No |
| Reverse Standoff Voltage | 11.1V |
| RoHS | Compliant |
| Test Current | 1mA |
Avnet Silica
Diodes Inc.
|
Production
|
Taiwan Semiconductor
|
Unknown
|
onsemi
|
Obsolete
|
Taiwan Semiconductor
|
Production
|
Vishay
|
Production
|