PHP32N06LT

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NXP Semiconductors
PHP32N06LT
Obsolete

Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Case/Package TO-220AB
Continuous Drain Current (ID) 34A
Current Rating 3A
Drain to Source Breakdown Voltage 60V
Drain to Source Resistance 43mΩ
Drain to Source Voltage (Vdss) 60V
Element Configuration Single
Fall Time 55ns
Gate to Source Voltage (Vgs) 15V
Input Capacitance 1.28nF
Lead Free Lead Free
Lifecycle Status Obsolete
Max Operating Temperature 175°C
Max Power Dissipation 97W
Min Breakdown Voltage 60V
Min Operating Temperature -55°C
Number of Elements 1
Number of Terminals 3
Power Dissipation 97W
Rise Time 120ns
RoHS Compliant
Turn-Off Delay Time 45ns
Voltage Rating (DC) 60V

Other Distributors

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Stock Break
CN: 14,366
1 $0.193
10 $0.1891
100 $0.18
1000 $0.18
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DE: 8,793
1 $0.4887
10 $0.4887
100 $0.4887
1000 $0.4887
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