PHX20N06T

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NXP Semiconductors
PHX20N06T
Obsolete

Power Field-Effect Transistor, 12.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Continuous Drain Current (ID) 12.9A
Current Rating 12.9A
Drain to Source Breakdown Voltage 55V
Drain to Source Resistance 75mΩ
Drain to Source Voltage (Vdss) 55V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 40ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 320pF
Introduction Date 2004-02-16
Lead Free Lead Free
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 23W
Min Breakdown Voltage 55V
Min Operating Temperature -55°C
Number of Elements 1
Number of Terminals 3
Packaging Bulk
Power Dissipation 23W
Rise Time 50ns
RoHS Compliant
Turn-Off Delay Time 70ns
Voltage Rating (DC) 55V
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