R6018ANJTL

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ROHM
R6018ANJTL
NRND

Trans MOSFET N-CH Si 600V 18A 3-Pin(2+Tab) LPTS T/R

Case/Package SC
China RoHS Non-Compliant
Continuous Drain Current (ID) 18A
Drain to Source Breakdown Voltage 600V
Drain to Source Resistance 270mΩ
Drain to Source Voltage (Vdss) 600V
Fall Time 65ns
Gate to Source Voltage (Vgs) 30V
Input Capacitance 2.05nF
Lead Free Lead Free
Lifecycle Status NRND
Max Operating Temperature 150°C
Max Power Dissipation 100W
Min Breakdown Voltage 600V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Channels 1
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Packaging Tape & Reel
Radiation Hardening No
Rds On Max 270mΩ
REACH SVHC No
Rise Time 85ns
RoHS Compliant
Turn-Off Delay Time 155ns
Turn-On Delay Time 37ns

Other Distributors

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JP: 100
1 $1.845
10 $1.794
100 $1.727
1000 $1.715
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US: 100
100 $2.4187
1000 $2.4187
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DE: 0
1000 €2.5486
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US: 360
1000 $19.1671
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US: 183
1 $3.54
10 $2.97
100 $2.34
1000 $2.34
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US: 102
100 $2.214
1000 $2.214
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HK: 30,265
10 $0.2693
100 $0.2552
1000 $0.2268
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HK: 1,464
1 $6.719
10 $6.3387
100 $5.9799
1000 $5.3221
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CN: 50,000
STMicroelectronics
Obsolete
STMicroelectronics
Obsolete
STMicroelectronics
Production