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| Case/Package | SMD/SMT |
| China RoHS | Compliant |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Contact Plating | Tin Bismuth |
| Current Transfer Ratio | 50% |
| Dark Current | 100nA |
| Part Family | PS2561DL2-1 |
| Forward Current | 40mA |
| Forward Voltage | 1.4V |
| Harmonized Tariff Schedule (HTS) Code | 8541.40.80.00 |
| Introduction Date | 2009-08-25 |
| Isolation Voltage | 5000Vrms |
| Lifecycle Status | Obsolete |
| Manufacturer Lifecycle Status | OBSOLETE |
| Max Collector Current | 50mA |
| Max Input Current | 40mA |
| Max Operating Temperature | 110°C |
| Max Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| MSL | 1 |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Packaging | Tape and Reel |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 6V |
| RoHS | Compliant |
Renesas
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NRND
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Toshiba
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NRND
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Renesas
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NRND
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Renesas
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Production
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Renesas
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Obsolete
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