RFD8P06ESM9A

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Fairchild Semiconductor
RFD8P06ESM9A
Obsolete

Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,...

Case/Package TO-252
Continuous Drain Current (ID) 8A
Drain to Source Breakdown Voltage -60V
Drain to Source Resistance 300mΩ
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 25ns
Gate to Source Voltage (Vgs) 20V
Introduction Date 2000-03-01
Lifecycle Status Obsolete
Max Operating Temperature 175°C
Max Power Dissipation 48W
Min Breakdown Voltage 60V
Min Operating Temperature -55°C
Number of Elements 1
Number of Terminals 2
Power Dissipation 48W
Rise Time 30ns
RoHS Non-Compliant
Turn-Off Delay Time 40ns
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