RN1101MFV

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Toshiba
RN1101MFV
Production

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Collector Emitter Voltage (VCEO) 50V
hFE Min 30
Lifecycle Status Production
Max Collector Current 100mA
Max Operating Temperature 150°C
Max Power Dissipation 150mW
Number of Elements 1
Number of Terminals 3
REACH SVHC Yes
Resistance 4.7kΩ
RoHS Compliant

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CN: 231,000
1000 $0.2148
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HK: 53,786
10 $0.018
100 $0.0175
1000 $0.0166
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HK: 102,871
1 $0.058
10 $0.052
100 $0.041
1000 $0.041
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CN: 92,434
1 $0.04
10 $0.04
100 $0.04
1000 $0.03
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DE: 2,274
1 $0.1942
10 $0.1942
100 $0.1942
1000 $0.1942
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