RN2105FV

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Toshiba
RN2105FV
Production

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Collector Emitter Voltage (VCEO) 50V
hFE Min 80
Lifecycle Status Production
Max Collector Current 100mA
Max Operating Temperature 150°C
Max Power Dissipation 150mW
Number of Elements 1
Number of Terminals 3
RoHS Compliant
Transition Frequency 200MHz