SSH6N80

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Samsung
SSH6N80
Obsolete

Power Field-Effect Transistor, 6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Continuous Drain Current (ID) 6A
Drain to Source Resistance 1.9Ω
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 170W
Min Breakdown Voltage 800V
Number of Elements 1
Number of Terminals 3
RoHS Non-Compliant
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