SI8402DB-T1-E1

SI8402DB-T1-E1

Vishay
SI8402DB-T1-E1
Obsolete

20-V N-channel 1.8-V (g-s) Mosfet | Siliconix / Vishay SI8402DB-T1-E1

China RoHS Compliant
Continuous Drain Current (ID) 5.3A
Drain to Source Breakdown Voltage 20V
Drain to Source Resistance 43mΩ
Drain to Source Voltage (Vdss) 20V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 145ns
Gate to Source Voltage (Vgs) 8V
Height 355.6µm
Introduction Date 2003-12-10
Lead Free Lead Free
Length 1.5748mm
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 2.77W
Min Breakdown Voltage 20V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 4
Number of Terminals 4
Power Dissipation 1.47W
Radiation Hardening No
Rds On Max 37mΩ
REACH SVHC Yes
Resistance 37MΩ
Rise Time 145ns
RoHS Compliant
Turn-Off Delay Time 45ns
Turn-On Delay Time 30ns
Width 1.6002mm

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