SI8806DB-T2-E1

SI8806DB-T2-E1

Vishay
SI8806DB-T2-E1
NRND

VISHAY SI8806DB-T2-E1 MOSFET Transistor, N Channel, 3.9 A, 12 V, 0.035 ohm, 4.5 V, 400 mV

Case/Package BGA
Continuous Drain Current (ID) 3.9A
Drain to Source Resistance 35mΩ
Drain to Source Voltage (Vdss) 12V
Element Configuration Single
Fall Time 12ns
Gate to Source Voltage (Vgs) 8V
Height 213µm
Lead Free Lead Free
Length 840µm
Lifecycle Status NRND
Max Operating Temperature 150°C
Max Power Dissipation 900mW
Min Operating Temperature -55°C
Mount Surface Mount
Number of Channels 1
Number of Elements 1
Number of Pins 4
Packaging Cut Tape (CT)
Power Dissipation 900mW
Radiation Hardening No
Rds On Max 43mΩ
REACH SVHC Yes
Rise Time 20ns
RoHS Compliant
Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Threshold Voltage 400mV
Turn-Off Delay Time 30ns
Turn-On Delay Time 10ns
Width 840µm

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DE: 7,904
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IL: 434,619
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