2N5157

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Solitron Devices
2N5157
Production

Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

Body Material Metal
Collector Emitter Saturation Voltage 800mV
Collector Emitter Voltage (VCEO) 500V
hFE Min 30
Lifecycle Status Production
Max Collector Current 3A
Max Operating Temperature 140°C
Max Power Dissipation 100W
Number of Elements 1
Number of Terminals 2
Power Dissipation 167W
RoHS Non-Compliant
Transition Frequency 3MHz

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10 $8.925
100 $8.925
1000 $8.925