SPI12N50C3

SPI12N50C3

Infineon
SPI12N50C3
Production

Trans MOSFET N-CH 500V 11.6A 3-Pin(3+Tab) TO-262 Tube

Case/Package TO-262-3
China RoHS Compliant
Continuous Drain Current (ID) 11.6A
Current Rating 11.6A
Drain to Source Breakdown Voltage 500V
Drain to Source Resistance 380mΩ
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 8ns
Gate to Source Voltage (Vgs) 20V
Height 9.45mm
Input Capacitance 1.2nF
Introduction Date 2003-03-04
Lead Free Lead Free
Length 10.36mm
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 125W
Min Breakdown Voltage 500V
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 125W
Radiation Hardening No
Rds On Max 380mΩ
REACH SVHC Yes
Rise Time 8ns
RoHS Compliant
Turn-Off Delay Time 45ns
Turn-On Delay Time 10ns
Voltage Rating (DC) 560V
Width 4.57mm

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CN: 5,379
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CN: 13,559
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