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| Case/Package | TO-262-3 |
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 455mΩ |
| Drain to Source Voltage (Vdss) | 650V |
| Element Configuration | Single |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 800pF |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 25W |
| Min Breakdown Voltage | 650V |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 455mΩ |
| REACH SVHC | Yes |
| Rise Time | 10.8ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 15.5ns |
Avnet
STMicroelectronics
|
Production
|
STMicroelectronics
|
Obsolete
|
STMicroelectronics
|
Obsolete
|
Infineon
|
NRND
|
STMicroelectronics
|
Obsolete
|