|
| Case/Package | TO-220 |
| China RoHS | Non-Compliant |
| Continuous Drain Current (ID) | 6.4A |
| Country of Origin | Mainland China |
| Current Rating | 6.4A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.2Ω |
| Drain to Source Voltage (Vdss) | 650V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.145nF |
| Introduction Date | 1980-01-04 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 125W |
| Min Breakdown Voltage | 650V |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Radiation Hardening | No |
| Rds On Max | 1.2Ω |
| REACH SVHC | No |
| Rise Time | 12ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 20ns |
| Voltage Rating (DC) | 650V |
onsemi
|
Obsolete
|
STMicroelectronics
|
Obsolete
|
STMicroelectronics
|
Production
|
STMicroelectronics
|
Obsolete
|
Fairchild Semiconductor
|
Obsolete
|