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| Case/Package | D2PAK |
| China RoHS | Non-Compliant |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | -80V |
| Drain to Source Resistance | 11.2mΩ |
| Drain to Source Voltage (Vdss) | -80V |
| Element Configuration | Single |
| Fall Time | 550ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.08mm |
| Input Capacitance | 10.85nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Lifecycle Status | Production |
| Max Junction Temperature (Tj) | 175°C |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 375W |
| Min Breakdown Voltage | 80V |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Power Dissipation | 13.6W |
| Radiation Hardening | No |
| Rds On Max | 11.2mΩ |
| REACH SVHC | No |
| Resistance | 11.1mΩ |
| Rise Time | 330ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 135ns |
| Turn-On Delay Time | 20ns |
| Weight | 1.437803g |
| Width | 9.65mm |
RS
RS
RS
Farnell
Farnell
Farnell
Future Electronics
Future Electronics
CoreStaff
Avnet
Fairchild Semiconductor
|
Obsolete
|
Fairchild Semiconductor
|
Obsolete
|
onsemi
|
Obsolete
|
onsemi
|
Production
|
Vishay
|
Obsolete
|